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Porous Silicon Gas Sensors: The Role of the Layer Thickness and the Silicon Conductivity
oleh: Francisco Ramírez-González, Godofredo García-Salgado, Enrique Rosendo, Tomás Díaz, Fabiola Nieto-Caballero, Antonio Coyopol, Román Romano, Alberto Luna, Karim Monfil, Erick Gastellou
Format: | Article |
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Diterbitkan: | MDPI AG 2020-09-01 |
Deskripsi
We studied the influences of the thickness of the porous silicon layer and the conductivity type on the porous silicon sensors response when exposed to ethanol vapor. The response was determined at room temperature (27 <inline-formula><math display="inline"><semantics><msup><mrow></mrow><mo>∘</mo></msup></semantics></math></inline-formula>C) in darkness using a horizontal aluminum electrode pattern. The results indicated that the intensity of the response can be directly or inversely proportional to the thickness of the porous layer depending on the conductivity type of the semiconductor material. The response of the porous sensors was similar to the metal oxide sensors. The results can be used to appropriately select the conductivity of semiconductor materials and the thickness of the porous layer for the target gas.