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This paper presents the design and simulation of a mass sensitive Lamb wave microsensor with CMOS technology provided by SilTerra. In this work, the effects of the metalization ratio variation on the transmission gain, total harmonic distortion (THD), and two different resonant modes (around 66 MHz and 86 MHz) are shown. It has been found that the metalization ratio can be adjusted in order to obtain a compromise between transmission gain and sensitivity, depending on the design criteria. By adding a Si<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula>N<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>4</mn></msub></semantics></math></inline-formula> layer on top of the device, a five-fold improvement in transmission gain is reached. It was also shown that the transmission of the input differential IDT configuration is 20% more efficient than a single terminal. With this combination, the mass sensitivity is about 114 [cm<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mn>2</mn></msup></semantics></math></inline-formula>/gr].