β‑Ga2O3 Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications
oleh: Mengwei Si, Lingming Yang, Hong Zhou, Peide D. Ye
| Format: | Article |
|---|---|
| Diterbitkan: | American Chemical Society 2017-10-01 |
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