InGaN-LD-Pumped <inline-formula> <tex-math notation="TeX">${\rm Pr}^{3+}$</tex-math></inline-formula>: <inline-formula> <tex-math notation="TeX">${\rm LiYF}_{4}$</tex-math></inline-formula> Continuous-Wave Laser at 915 nm
oleh: Biao Qu, Bin Xu, Yongjie Cheng, Saiyu Luo, Huiying Xu, Yikun Bu, Patrice Camy, Jean-Louis Doualan, Richard Moncorge, Zhiping Cai
| Format: | Article |
|---|---|
| Diterbitkan: | IEEE 2014-01-01 |
Deskripsi
We demonstrate the first InGaN-LD-pumped room temperature and continuous-wave laser operation of a Pr<sup>3+</sup>: LiYF<sub>4</sub> crystal at 915 nm. A maximum output power up to 78 mW with a laser slope efficiency of about 17% is obtained. The round-trip optical losses are estimated to be about 0.45%, and the M<sup>2</sup> beam quality factors measured in x and y dimensions are about 1.07 and 1.04, respectively.