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A new proposition of passive (no external DC bias) memristor emulator (MRE) utilizing DTMOS technique which consists of four MOSFETs and a capacitor has been presented. The proposed MRE exhibits high operating frequency <inline-formula> <tex-math notation="LaTeX">$(\sim 500~\mathrm {MHz})$ </tex-math></inline-formula>, zero static power and shows incremental behavior. The conventional mathematical equation of MRE has been derived considering the second-order effects of all the MOSFETs utilized. The proposed circuit has been simulated by the Cadence Virtuoso (IC617) spectre tool using <inline-formula> <tex-math notation="LaTeX">$180 \mathrm {~nm}$ </tex-math></inline-formula> technology parameters. The layout occupies <inline-formula> <tex-math notation="LaTeX">$1305 \mu \mathrm {m}^{2}$ </tex-math></inline-formula> area. The experimental verification has been carried out utilizing ALD1116 and ALD1117 dual N-channel and P-channel MOSFET arrays to demonstrate the practical viability. Finally, different possible applications namely; analog filters, oscillators (simple and chaotic), Schmitt trigger, Amoeba learning have been realized using proposed MRE to show its neuromorphic capability. Also, new logical AND &#x0026; OR and NOT circuit configurations have been designed using proposed MRE.