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Electron transporting layers facilitating electron extraction and suppressing hole recombination at the cathode are crucial components in any thin-film solar cell geometry, including that of metal–halide perovskite solar cells. Amorphous tantalum oxide (Ta₂O₅) deposited by spin coating was explored as an electron transport material for perovskite solar cells, achieving power conversion efficiency (PCE) up to ~14%. Ultraviolet photoelectron spectroscopy (UPS) measurements revealed that the extraction of photogenerated electrons is facilitated due to proper alignment of bandgap energies. Steady-state photoluminescence spectroscopy (PL) verified efficient charge transport from perovskite absorber film to thin Ta₂O₅ layer. Our findings suggest that tantalum oxide as an n-type semiconductor with a calculated carrier density of ~7 × 10¹⁸/cm³ in amorphous Ta₂O₅ films, is a potentially competitive candidate for an electron transport material in perovskite solar cells.