Bipolar Resistive Switching Characteristics in Flexible Pt/MZT/Al Memory and Ni/NbO<sub>2</sub>/Ni Selector Structure
oleh: Ke-Jing Lee, Yu-Chi Chang, Cheng-Jung Lee, Li-Wen Wang, Yeong-Her Wang
| Format: | Article |
|---|---|
| Diterbitkan: | IEEE 2018-01-01 |
Deskripsi
The use of a threshold-switching Ni/NbO<sub>2</sub>/Ni device with a memory-switching Pt/magnesium zirconate titanate/Al device on a flexible substrate was proposed to suppress undesired sneak currents. The proposed flexible one selector and one resistor (1S1R) memory device exhibits a low operation voltage, good ON/OFF ratio of 10<sup>5</sup>, uniform current distribution, excellent flexibility, and stable I-V curve at 85 °C. The good selection and memory properties of the flexible 1S1R memory device are highly promising for high-density and low-power flexible electronic applications.