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This paper introduces a new device concept and outlines the fabrication process of a bipolar junction transistor based on an IGZO/NiO/PbSe nanoband array heterostructure. We performed comprehensive electrical property testing and characterization analysis on the device to thoroughly assess the device's performance. The heterojunction structure efficiently amplifies the opto-electric responsivity and enhances the transmission efficiency of photogenerated carriers. Significantly, the phototransistor demonstrates a high photoresponsivity of 4000 A/W under an incident light power of 1 μW/cm² and a wavelength of 850 nm. Hence, a solution detection system integrated with a bipolar phototransistor is designed. Through the analysis of the output signals, the system accurately determines the identity of the solute present in the solution.