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The energetic sulfide vapor process on colloidal indium arsenide (InAs) quantum dots (QDs) for integrated optoelectronic devices is demonstrated. X‐ray photoemission spectroscopy supports the presence of sulfur on QD surface, which increases the air stability, and ultraviolet photoemission spectroscopy and field‐effect transistor analysis confirm n‐type charge transport of corresponding QD films with higher electron mobilities. Photoconductivity of the same devices in near‐infrared wavelength shows gate bias‐dependent recombination of photogenerated carriers, coming from charge accumulation and depletion transition of QD channels. The synergetic approach of the vapor process on colloidal QD solids opens a promising opportunity for scalable and complementary metal‐oxide semiconductor‐compatible optoelectronic devices.