An InGaAs/InP DHBT With Simultaneous $\text{f}_{\boldsymbol \tau }/\text{f}_{\text {max}}~404/901$ GHz and 4.3 V Breakdown Voltage
oleh: Johann C. Rode, Han-Wei Chiang, Prateek Choudhary, Vibhor Jain, Brian J. Thibeault, William J. Mitchell, Mark J. W. Rodwell, Miguel Urteaga, Dmitri Loubychev, Andrew Snyder, Ying Wu, Joel M. Fastenau, Amy W. K. Liu
| Format: | Article |
|---|---|
| Diterbitkan: | IEEE 2015-01-01 |
Deskripsi
We report an InP/InGaAs/InP double heterojunction bipolar transistor fabricated in a triple-mesa structure, exhibiting simultaneous 404 GHz f<sub>τ</sub> and 901 GHz f<sub>max</sub>. The emitter and base contacts were defined by electron beam lithography with better than 10 nm resolution and smaller than 20 nm alignment error. The base-collector junction has been passivated by depositing a SiN<sub>x</sub> layer prior to benzocyclobutene planarization, improving the open-base breakdown voltage BV<sub>CEO</sub> from 3.7 to 4.3 V.