Defect engineering of silicon with ion pulses from laser acceleration
oleh: Walid Redjem, Ariel J. Amsellem, Frances I. Allen, Gabriele Benndorf, Jianhui Bin, Stepan Bulanov, Eric Esarey, Leonard C. Feldman, Javier Ferrer Fernandez, Javier Garcia Lopez, Laura Geulig, Cameron R. Geddes, Hussein Hijazi, Qing Ji, Vsevolod Ivanov, Boubacar Kanté, Anthony Gonsalves, Jan Meijer, Kei Nakamura, Arun Persaud, Ian Pong, Lieselotte Obst-Huebl, Peter A. Seidl, Jacopo Simoni, Carl Schroeder, Sven Steinke, Liang Z. Tan, Ralf Wunderlich, Brian Wynne, Thomas Schenkel
| Format: | Article |
|---|---|
| Diterbitkan: | Nature Portfolio 2023-03-01 |
Deskripsi
Defect engineering and doping of semiconductors by ion irradiation are essential in large-scale integration of electronic devices. Here, intense ion pulses from a laser-accelerator, with flux levels up to 1022 ions cm-2 s-1, are used to induce and optimize silicon color centers and photon emitters in the telecom band.