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InN hexagonal thin wurtzite disks were grown on γ-LiAlO2 by plasma-assisted molecular-beam epitaxy at low temperature (470oC). The ( 000 1 ¯ ) InN thin disk was established with the capture of N atoms by the β ¯ -dangling bonds of most-outside In atoms, and then the lateral over-growth of the In atoms were caught by the β ¯ -dangling bonds of the N atoms. From the analyses of high-resolution transmission electron microscopy, the lateral over-grown width was extended to three unit cells at [ 1 1 ¯ 00 ]InN direction for a unit step-layer, resulting in an oblique surface with 73o off c-axis.