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Spin-orbit torques (SOTs) in Ta/CoFeB/MgO structures are studied by harmonic voltage method. The results indicate that both Slonczewski-like (HSL) and field-like (HFL) effective field are enhanced by annealing in the film stacks with various Ta thicknesses. Investigation of the crystallographic phase of the Ta layers and resistance of Hall bar devices suggest that annealing may induce a phase transformation in the Ta layers from the α to the β phase, which results in the enhanced HSL of the annealed samples. Current-induced magnetization switching experiments revealed a corresponding decrease of the switching current in the annealed samples because of their enhanced SOTs.