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Abstract In the present work, indium tin oxide (ITO)/n‐CdS/p‐SnS/Au structured solar cells are fabricated with best conversion efficiency of 0.005%. A detailed investigation is made into the cause of the poor conversion efficiency and the cause is narrowed down to defects in p‐SnS which effect the junction and the neutral region of the cell. The junctions performance is quantified using the ideality factor which is found to be related to the band misalignment. The paper also investigates into literature and discusses efforts made to overcome the problems with this structure.