Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer
oleh: Yuan Li, Zhi Cheng Zhang, Jiaqiang Li, Xu-Dong Chen, Ya Kong, Fu-Dong Wang, Guo-Xin Zhang, Tong-Bu Lu, Jin Zhang
| Format: | Article |
|---|---|
| Diterbitkan: | Nature Portfolio 2022-08-01 |
Deskripsi
Realizing fast nonvolatile floating gate memories is constrained by the slow tunnelling mechanism for charge injection. Here, Chen et al. demonstrate operation speed of 20 ns and power consumption of 10 fJ using graphdiyne oxide as a threshold switching layer instead of a dielectric blocking layer.