The effect of charge transfer transition on the photostability of lanthanide-doped indium oxide thin-film transistors
oleh: Penghui He, Hua Xu, Linfeng Lan, Caihao Deng, Yongbo Wu, Yilong Lin, Siting Chen, Chunchun Ding, Xiao Li, Miao Xu, Junbiao Peng
| Format: | Article |
|---|---|
| Diterbitkan: | Nature Portfolio 2021-08-01 |
Deskripsi
Thin-film transistors based on amorphous oxide semiconductors have promising applications, but their stability is hampered by negative bias illumination stress. Here, a systematic study of lanthanide-doped indium oxide semiconductors reveals that Pr and Tb are most efficient in improving the photostability of devices.