On the Characterization and Separation of Trapping and Ferroelectric Behavior in HfZrO FET
oleh: Md. Nur Kutubul Alam, Ben Kaczer, Lars-Ake Ragnarsson, Mihaela Popovici, Gerhard Rzepa, Naoto Horiguchi, Marc Heyns, Jan Van Houdt
| Format: | Article |
|---|---|
| Diterbitkan: | IEEE 2019-01-01 |
Deskripsi
N-channel FETs with ferroelectric (FE) HfZrO gate oxide are fabricated, showing steep subthreshold slope under certain conditions. Possible origins of I<sub>D</sub>-V<sub>G</sub> hysteresis, the hysteresis versus subthreshold slope tradeoff, dependence on the bias voltage and temperature and the competition between trapping and FE behavior are reported and discussed. A band of active traps in the FE layer responsible for charge trapping during device operation is characterized. Transient I<sub>D</sub>-V<sub>G</sub> measurements are introduced to facilitate differentiating between trapping and FE behavior during subthreshold slope measurements.