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The decoupled-plasma nitridation treatment process is an effective recipe for repairing the trap issues when depositing high-k gate dielectric. Because of this effect, electrical performance is not only increased with the relative dielectric constant, but there is also a reduction in gate leakage. In the past, the effect of nitridation treatment on channel-length was revealed, but a channel-width effect with that treatment was not found. Sensing the different nano-node channel-width n-channel MOSFETs, the electrical characteristics of these test devices with nitridation treatments were studied and the relationship among them was analyzed. Based on measurement of the <i>V_T</i>, <i>SS</i>, <i>G_m</i>, <i>I_ON</i>, and <i>I_OFF</i> values of the tested devices, the electrical performance of them related to process treatment is improved, including the roll-off effect of channel-width devices. On the whole, the lower thermal budget in nitridation treatment shows better electrical performance for the tested channel-width devices.