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AlGaN/GaN high electron mobility transistors (HEMTs) possess excellent electrical and thermal properties. In this study, we examined the electrical performance of AlGaN/GaN HEMTs to clarify the operational mechanism of the device with temperature variation in an effort to further advance development of high-speed, high-power devices and sensors for temperature applications. Our results revealed drain current degradation caused by temperature-dependent series resistance, as well as several scattering mechanisms. In addition, a negligible surface roughness scattering effect in AlGaN/GaN HEMTs was confirmed through mobility attenuation factors.