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This paper presented a AlGaN/GaN Schottky barrier diodes (SBDs) on free-standing GaN substrates with a Si doped barrier layer were fabricated for high power application. Compared with the conventional SBDs, the SBDs with doped barrier layer have the lower turn-on voltage (<inline-formula> <tex-math notation="LaTeX">$V_{ON}$ </tex-math></inline-formula>) and specific on resistance (<italic>R_ON&#x005F;SP</italic>) because more free carriers are induced in two-dimensional electron gas (2DEG) channel. With Si doping concentration of <inline-formula> <tex-math notation="LaTeX">$1 \times 10^{20}$ </tex-math></inline-formula> cm^&#x2212;3 for AlGaN barrier layer, the SBDs demonstrate <italic>R_ON&#x005F;SP</italic> of 0.12 m<inline-formula> <tex-math notation="LaTeX">$\Omega \cdot \mathrm{cm^{2}}$ </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">$V_{ON}$ </tex-math></inline-formula> of 0.41 V, breakdown voltage of 339 V, and power figure-of-merit (<italic>PFOM</italic>) of 957.6 MV/cm², which have a great potential for high-speed power device applications. Meanwhile, the SBDs with doped barrier have a faster reverse recovery time, and a better low-frequency noise (LFN) characteristics at low current density due to high carrier mobility and less generation-recombination (G-R) noise.