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A novel 3.3 kV Shielded Insulated Gate Bipolar Transistor (SIGBT) is proposed in this paper. Unlike the partly shielded N-injector of the diode-clamped TIGBT, which is the carrier store layer, the SIGBT features a diode-clamped P-layer to completely shield the N-injector and to protect the N-injector from high electric field more steadily. Then, the N-injector can be heavily doped to reduce the on-state voltage (Von), and Von can be designed independently of the breakdown voltage (BV). TCAD simulation indicates that under the same level of BV, compared with the conventional Carrier Store Trench Bipolar Transistor (CSTBT), the Eoff (the turn-off loss) of the proposed SIGBT is 85.6% lower under Von ≈ 1.4 V. Moreover, the saturation current density also decreases by 31.2%.