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N-channel solution-processed organic thin film transistors (TFTs) based on a blend network of N,N'-bis(1H,1H-perfluorobutyl)-1,7-dicyanoperylene-3,4:9,10-tetracarboxylic diimide (PDIF-CN2) and zinc oxide (ZnO) nanowires show remarkable electron field effect mobilities of up to 0.5 cm²/V·s in ambient air, which is about five-fold higher than those based on pristine PDIF-CN2 films. When tested in both bias directions the output and transfer electrical hysteresis of those blend TFTs are negligible. In addition, their low processing temperature and flexible semiconducting layer makes them a highly promising means of realizing high performance, solution-processed n-channel organic TFTs.