Contactless determination of doping concentration and resistivity of silicon wafers with cavity ring-down technique
oleh: Qian Wang, Chunyu Zhang, Yujun Du, Rong Liu, Linqiu Tan, Weiguo Liu
| Format: | Article |
|---|---|
| Diterbitkan: | Elsevier 2020-03-01 |
Deskripsi
A contactless method for measuring the doping concentration and resistivity of silicon wafers based on cavity ring-down technique was developed and verified experimentally. The doping concentration and resistivity of the silicon wafer in our experiment were calculated to be 1.53 ± 0.47 × 1016 cm−3 and 1.08 ± 0.41 Ω·cm, respectively, by measuring the optical loss caused by the sample, which are consistent with that obtained with conventional four-point probe measurements. The results indicated that the proposed method can be an alternative non-destructive tool for doping concentration and resistivity measurements.