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This paper is the second part of a 2D description of a single crystal thin plate growth by micro-pulling–down (μ-PD) method. This part concerns the following aspects: temperature distribution and melt flow in the melt–crystal system (section 2); impurity distribution (section 3). Numerical illustration concerning the above aspects are given for the growth of a thin Si plate of 0.0001 [m] by using COMSOL Multiphysics software. The advantage of this description is that it helps in the better understanding of the impurity dispersion in meniscus and may help the improvement of crystal quality.