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Thermal and Electronic Transport Properties of the Half-Heusler Phase ScNiSb
oleh: Karol Synoradzki, Kamil Ciesielski, Igor Veremchuk, Horst Borrmann, Przemysław Skokowski, Damian Szymański, Yuri Grin, Dariusz Kaczorowski
Format: | Article |
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Diterbitkan: | MDPI AG 2019-05-01 |
Deskripsi
Thermoelectric properties of the half-Heusler phase ScNiSb (space group <i>F</i><inline-formula> <math display="inline"> <semantics> <mover accent="true"> <mn>4</mn> <mo>¯</mo> </mover> </semantics> </math> </inline-formula>3<i>m</i>) were studied on a polycrystalline single-phase sample obtained by arc-melting and spark-plasma-sintering techniques. Measurements of the thermopower, electrical resistivity, and thermal conductivity were performed in the wide temperature range 2−950 K. The material appeared as a <i>p</i>-type conductor, with a fairly large, positive Seebeck coefficient of about 240 μV K<sup>−1</sup> near 450 K. Nevertheless, the measured electrical resistivity values were relatively high (83 μΩm at 350 K), resulting in a rather small magnitude of the power factor (less than 1 × 10<sup>−3</sup> W m<sup>−1</sup> K<sup>−2</sup>) in the temperature range examined. Furthermore, the thermal conductivity was high, with a local minimum of about 6 W m<sup>−1</sup> K<sup>−1</sup> occurring near 600 K. As a result, the dimensionless thermoelectric figure of merit showed a maximum of 0.1 at 810 K. This work suggests that ScNiSb could be a promising base compound for obtaining thermoelectric materials for energy conversion at high temperatures.