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This study focuses on the thermal characterization of porous gallium nitride (GaN) using<br />an extended 3ω method. Porous semiconductor materials provide a solution to the need for on-chip<br />thermal insulation, a fundamental requirement for low-power, high-speed and high-accuracy<br />thermal sensors. Thermal insulation is especially important in GaN devices, due to the intrinsically<br />high thermal conductivity of the material. The results show one order of magnitude reduction in<br />thermal conductivity, from 130 W/mK to 10 W/mK, in line with theoretical predictions for porous<br />materials. This achievement is encouraging in the quest for integrating sensors with opto-, powerand<br />RF-electronics on a single GaN chip.