Antisymmetric linear magnetoresistance and the planar Hall effect
oleh: Yishu Wang, Patrick A. Lee, D. M. Silevitch, F. Gomez, S. E. Cooper, Y. Ren, J.-Q. Yan, D. Mandrus, T. F. Rosenbaum, Yejun Feng
| Format: | Article |
|---|---|
| Diterbitkan: | Nature Portfolio 2020-01-01 |
Deskripsi
Magnetoresitance (MR) is a tool to study electronic transport and spin order in metals. Here, the authors demonstrate two different microscopic origins of antisymmetric linear MR from both Zeeman-split Fermi surface and anomalous electron velocity.