Brightness of AlGaInAs/InP Multimode Diode Lasers with Different Aperture Widths
oleh: Yulia Kirichenko (Bobretsova), Dmitriy Veselov, Alexander Klimov, Sergey Slipchenko, Natalia Shuvalova, Andrey Lyutetsky, Nikita Pikhtin, Alexander Marmalyuk, Vladimir Svetogorov, Yuriy Ryaboshtan, Maksim Ladugin
| Format: | Article |
|---|---|
| Diterbitkan: | MDPI AG 2023-10-01 |
Deskripsi
A set of semiconductor lasers with different stripe widths is fabricated based on the AlGaInAs/InP heterostructure with an ultra-narrow waveguide. The key characteristics of the lasers (light-current curves (L-I), current-voltage curves (I-V), and spectral and spatial characteristics) are measured, and their dependence on the stripe width is shown. The operating optical power increases from 1.4 W to 4.3 W; however, the lateral brightness decreases from 1.09 W/(mm*mrad) to 0.65 W/(mm*mrad) as the stripe width increases from 20 to 150 μm.