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Recently, InGaN grown on semipolar and non-polar orientation has caused special attraction due to reduction in the built-in polarization field and increased confinement of high energy states compared to traditional polar c-plane orientation. However, any widespread-accepted report on output power and frequency response of the InGaN blue laser in non-c-plane orientation is readily unavailable. This work strives to address an exhaustive numerical investigation into the optoelectronic performance and frequency response of In_0.17Ga_0.83N/GaN quantum well laser in polar (0001), non-polar (<inline-formula><math display="inline"><semantics><mrow><mn>10</mn><mover accent="true"><mrow><mn>1</mn></mrow><mo stretchy="true">¯</mo></mover><mn>0</mn></mrow></semantics></math></inline-formula>) and semipolar (<inline-formula><math display="inline"><semantics><mrow><mn>10</mn><mover accent="true"><mrow><mn>1</mn></mrow><mo stretchy="true">¯</mo></mover><mn>2</mn></mrow></semantics></math></inline-formula>), (<inline-formula><math display="inline"><semantics><mrow><mn>11</mn><mover accent="true"><mrow><mn>2</mn></mrow><mo stretchy="true">¯</mo></mover><mn>2</mn></mrow></semantics></math></inline-formula>) and (<inline-formula><math display="inline"><semantics><mrow><mn>10</mn><mover accent="true"><mrow><mn>1</mn></mrow><mo stretchy="true">¯</mo></mover><mn>1</mn></mrow></semantics></math></inline-formula>) orientations by working out a 6 × 6 k.p Hamiltonian at the Γ-point using the tensor rotation technique. It is noticed that there is a considerable dependency of the piezoelectric field, energy band gap, peak optical gain, differential gain and output power on the modification in crystal orientation. Topmost optical gain of 4367 cm⁻¹ is evaluated in the semipolar (<inline-formula><math display="inline"><semantics><mrow><mn>11</mn><mover accent="true"><mrow><mn>2</mn></mrow><mo stretchy="true">¯</mo></mover><mn>2</mn></mrow></semantics></math></inline-formula>)-oriented laser system at an emission wavelength of 448 nm when the injection carrier density is 3.7 × 10¹⁸ cm⁻³. Highest lasing power and lowest threshold current are reported to be 4.08 mW and 1.45 mA in semipolar (<inline-formula><math display="inline"><semantics><mrow><mn>11</mn><mover accent="true"><mrow><mn>2</mn></mrow><mo stretchy="true">¯</mo></mover><mn>2</mn></mrow></semantics></math></inline-formula>) crystal orientation. A state-space model is formed in order to achieve the frequency response which indicates the highest magnitude (dB) response in semipolar (<inline-formula><math display="inline"><semantics><mrow><mn>11</mn><mover accent="true"><mrow><mn>2</mn></mrow><mo stretchy="true">¯</mo></mover><mn>2</mn></mrow></semantics></math></inline-formula>) crystal orientation.