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Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor
oleh: Xuechao Yu, Peng Yu, Di Wu, Bahadur Singh, Qingsheng Zeng, Hsin Lin, Wu Zhou, Junhao Lin, Kazu Suenaga, Zheng Liu, Qi Jie Wang
Format: | Article |
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Diterbitkan: | Nature Portfolio 2018-04-01 |
Deskripsi
The mid-infrared technologies are essential to various applications but suffer from limited materials with suitable bandgap. Here the authors demonstrate that two-dimensional atomically thin PtSe2 with variable bandgaps in the mid-infrared via layer and defect engineering is highly promising for mid-infrared optoelectronics.