Effects of proton irradiation on 60 GHz CMOS transceiver chip for multi-Gbps communication in high-energy physics experiments
oleh: Imran Aziz, Dragos Dancila, Dragos Dancila, Sebastian Dittmeier, Sebastian Dittmeier, Alexandre Siligaris, Cedric Dehos, Patrik Martin De Lurgio, Zelimir Djurcic, Gary Drake, Jose Luis Gonzalez Jimenez, Leif Gustaffson, Don-Won Kim, Elizabeth Locci, Ulrich Pfeiffer, Pedro Rodriquez Vazquez, Dieter Röhrich, Andre Schöning, Hans Kristian Soltveit, Kjetil Ullaland, Pierre Vincent, Shiming Yang, Richard Brenner
| Format: | Article |
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| Diterbitkan: | Wiley 2019-05-01 |
Deskripsi
This article presents the experimental results of 17 MeV proton irradiation on a 60 GHz low power, half-duplex transceiver (TRX) chip implemented in 65 nm CMOS technology. It supports short range point-to-point data rate up to 6 Gbps by employing on-off keying (OOK). To investigate the irradiation hardness for high-energy physics (HEP) applications, two TRX chips were irradiated with total ionising doses (TID) of 74 and 42 kGy and fluence of [inline-formula] and [inline-formula] for RX and TX modes, respectively. The chips were characterised by pre- and post-irradiation analogue voltage measurements on different circuit blocks as well as through the analysis of wireless transmission parameters like bit error rate (BER), eye diagram, jitter etc. Post-irradiation measurements have shown certain reduction in performance but both TRX chips have been found operational through over the air measurements at 5 Gbps. Moreover, very small shift in the carrier frequency was observed after the irradiation.