Analysis of the Dispersion of Electrical Parameters and Characteristics of FinFET Devices
oleh: Arkadiusz Malinowski, Daniel Tomaszewski, Lidia Ĺukasiak, Andrzej Jakubowski, Makoto Sekine, Masaru Hori, Michael L. Korwin-Pawlowski
| Format: | Article |
|---|---|
| Diterbitkan: | National Institute of Telecommunications 2023-06-01 |
Deskripsi
Extensive numerical simulations of FinFET structures have been carried out using commercial TCAD tools. A series of plasma etching steps has been simulated for different process conditions in order to evaluate the influence of plasma pressure, composition and powering on the FinFET topography. Next, the most important geometric parameters of the FinFETs have been varied and the electrical characteristics have been calculated in order to evaluate the sensitivity of the FinFET electrical parameters on possible FinFET structure variability.