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Recent investigations of fundamental electronic properties (especially the carrier transport mechanisms) of Si nanocrystal embedded in the amorphous SiC films are highly desired in order to further develop their applications in nano-electronic and optoelectronic devices. Here, Boron-doped Si nanocrystals embedded in the amorphous SiC films were prepared by thermal annealing of Boron-doped amorphous Si-rich SiC films with various Si/C ratios. Carrier transport properties in combination with microstructural characteristics were investigated via temperature dependence Hall effect measurements. It should be pointed out that Hall mobilities, carrier concentrations as well as conductivities in films were increased with Si/C ratio, which could be reached to the maximum of 7.2 cm²/V∙s, 4.6 × 10¹⁹ cm⁻³ and 87.5 S∙cm⁻¹, respectively. Notably, different kinds of carrier transport behaviors, such as Mott variable-range hopping, multiple phonon hopping, percolation hopping and thermally activation conduction that play an important role in the transport process, were identified within different temperature ranges (10 K~400 K) in the films of different Si/C ratio. The changes from Mott variable-range hopping process to thermally activation conduction process with temperature were observed and discussed in detail.