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In this paper, the reaction rate of oxygen vacancy (VO) by the derivatives of threshold voltage (Vth) in the amorphous indium-gallium-zinc oxide thin-film transistors under light pulses with altering duty ratios is investigated. More importantly, after collecting and analyzing a lot of experimental results, a comprehensive model named VO pool is proposed. The proposed model can more universally describe the characteristic of VO reacting to the light and its degradation behavior under various kinds of stress condition.