A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer
oleh: You-Chen Weng, Yueh-Chin Lin, Heng-Tung Hsu, Min-Lu Kao, Hsuan-Yao Huang, Daisuke Ueda, Minh-Thien-Huu Ha, Chih-Yi Yang, Jer-Shen Maa, Edward-Yi Chang, Chang-Fu Dee
| Format: | Article |
|---|---|
| Diterbitkan: | MDPI AG 2022-01-01 |
Deskripsi
An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer with a 2 nm AlGaN electron-blocking layer (EBL) is investigated for the first time for millimeter-wave applications. Compared with the double heterostructure field effect transistor (DHFET), the AlGaN/GaN HEMT with the GaN:C/EBL buffer has a lower vertical leakage, higher thermal stability, and better RF performance. In addition, AlGaN EBL can prevent carbon-related traps from GaN:C and improve electron confinement in 2DEG during high-frequency operation. Finally, a P<sub>out</sub> of 31.2 dBm with PAE of 21.7% were measured at 28 GHz at 28 V. These results demonstrated the great potential of HEMTs using GaN:C with AlGaN EBL epitaxy technology for millimeter-wave applications.