Silicon Nanostructures For Efficient Light Absorption In Photovoltaic Devices

oleh: Marius TREIDERIS, Virginijus BUKAUSKAS, Alfonsas RĖZA, Irena ŠIMKIENĖ, Arūnas ŠETKUS, Andrius MANEIKIS

Format: Article
Diterbitkan: Kaunas University of Technology 2014-06-01

Deskripsi

Porous silicon light trapping layers (por-Si LTL) were manufactured using electrochemical etching. Optical measurements have shown the improved por-Si LTL optical properties versus bulk silicon. The p-n junction was formed by boron diffusion from borosilicate glasses. Scanning Kelvin Force Microscopy (SKFM) and Tunnelling Atomic Force Microscopy (TUNA) techniques were used to determine the location of p-n junction in samples with porous silicon light trapping layers. <p>DOI: <a href="http://dx.doi.org/10.5755/j01.ms.20.2.6326">http://dx.doi.org/10.5755/j01.ms.20.2.6326</a></p>