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In this work, we adopt a low-temperature sustainable plasma treatment approach for the fabrication of ferroelectric memory devices. From our experimental results, we found that the ferroelectric polarization characteristics of HfAlO _x ferroelectric device could be further improved by using low-temperature nitrogen plasma treatment on bottom TiN electrode for surface modification. The low-temperature nitrogen plasma treatment on TiN bottom electrode not only prevent electrode oxidation, but also lowers the generation of defect traps at the interface between ferroelectric HfAlO _x and TiN bottom electrode during high-temperature ferroelectric annealing process. Besides, the nitrogen-treated bottom electrode also can improve bias-stress induced instability and cycling endurance of HfAlO _x ferroelectric devices due to the effective suppression of randomly distributed defect traps or oxygen vacancies near the surface of bottom electrode.