Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
oleh: Jangyup Son, Junyoung Kwon, SunPhil Kim, Yinchuan Lv, Jaehyung Yu, Jong-Young Lee, Huije Ryu, Kenji Watanabe, Takashi Taniguchi, Rita Garrido-Menacho, Nadya Mason, Elif Ertekin, Pinshane Y. Huang, Gwan-Hyoung Lee, Arend M. van der Zande
| Format: | Article |
|---|---|
| Diterbitkan: | Nature Portfolio 2018-09-01 |
Deskripsi
Fabrication methods to pattern thin materials are a critical tool to build molecular scale devices. Here the authors report a selective etching method using XeF2 gas to pattern graphene based heterostructures with multiple active layers and achieve 1D contacts with low contact resistivity of 80 Ω·µm