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This journal paper introduces a charge-based approach for the calculation of charges and capacitances in staggered organic thin-film transistors (OTFTs). Based on an already existing DC model, the charges are yielded in an analytical and compact form. A linear charge partitioning scheme is applied to ascribe charges to the drain/source side of the channel. The final equation is only dependent on geometrical parameters and the charge densities at the drain/source end of the channel. Furthermore, the fringing regions in fabricated devices are taken into account. The compact model is implemented in Verilog-A and the capacitances are compared to Sentaurus TCAD simulation results as well as measurement data. Additionally, simulation results for a differential amplifier are compared to measurements. The advantage of this model is its unique formulation covering all operation regimes.