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Recently, there is a growing interest in applying ZnO thin films on silicon buffer substrates for p-n junction devices, optical wave guide, etc. A sol gel process is very attractive technique for obtaining oxide thin films, due to easy control of film composition, easy fabrication of large area thin films with low cost and the ability to coat-specific shapes substrates. This paper presents a kinetic investigation of the crystallization (550-650 oC) of high preferential c-axis oriented ZnO thin films on p-type (100) silicon wafer substrate, from XRD data.