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In this work, a Schottky barrier diode (SBD) is fabricated and demonstrated based on the edge-defined film-fed grown (EFG) Ga₂O₃ crystal substrate. At the current stage, for high resistance un-doped Ga₂O₃ films and/or bulk substrates, the carrier concentration (and other electrical parameters) is difficult to be obtained by using the conventional Hall measurement. Therefore, we extracted the electrical parameters such as on-state resistance (<i>R_on</i>), Schottky barrier height (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>ϕ</mi><mi>B</mi></msub></mrow></semantics></math></inline-formula>), the ideal factor (<i>n</i>), series resistance (<i>R_s</i>) and the carrier concentration (<i>N_d</i>) by analyzing the current density–voltage (J–V) and capacitance–voltage (C–V) curves of the Ga₂O₃-based SBD, systematically. The detailed measurements and theoretical analysis are displayed in this paper.