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Past studies have demonstrated the positive impact of step-graded <inline-formula> <tex-math notation="LaTeX">$p$ </tex-math></inline-formula>-type Al_{<italic>x</italic>}Ga_{1&#x2212;<italic>x</italic>}N/GaN superlattice (SL) electron blocking layer (EBL) structures on the efficiency performance of ultraviolet (UV) GaN-based light-emitting diodes (LEDs). However, the optimal Al-grading structure of these SL EBLs remains unclear owing to a lack of systematic investigation. The present work addresses this issue by applying EBL composed of alternating half-peak, single-peak, and double-peak <inline-formula> <tex-math notation="LaTeX">$p$ </tex-math></inline-formula>-type Al_{<italic>x</italic>}Ga_{1&#x2212;<italic>x</italic>}N/GaN SL structures with varying values of <inline-formula> <tex-math notation="LaTeX">$x$ </tex-math></inline-formula> ranging from 0.05 to 0.15 in 0.05 step increments. Simulation analysis is employed to obtain the internal quantum efficiency (IQE), energy band diagrams, polarization compensation factor, hole concentration, and electron concentration of GaN-based UV LEDs with three different SL-EBL structures. The results obtained at an injection current of 200 mA demonstrate that UV LEDs with double-peak SL-EBL structures provide the maximum IQE, which is &#x007E;38&#x0025; greater than that of devices employing the conventional EBL in simulation experiment. This SL-EBL is demonstrated to improve the hole injection and electron overflow performance of GaN-based UV LEDs owing to the polarization charge and lattice mismatch at the <italic>p-</italic>Al_{<italic>x</italic>}Ga_{1&#x2212;<italic>x</italic>}N/GaN interfaces. The reduced Al composition on the <italic>p-</italic>GaN side reduces the potential barrier of hole injection. Moreover, the predicted increase in the IQE of GaN-based UV LEDs with the optimal SL-EBL is verified experimentally.