The Effect of Gamma Rays on the Main Static Characteristics of SiGe Transistors
oleh: O. V. Dvornikov, V. L. Dziatlau, N. N. Prokopenko, V. A. Tchekhovski
| Format: | Article |
|---|---|
| Diterbitkan: | Igor Sikorsky Kyiv Polytechnic Institute 2017-12-01 |
Deskripsi
The article considers the effect of 60Co gamma rays on the characteristics (the major ones for the analog ICs) of SiGe n-p-n transistors of SGB25V technology: the voltage across the forward-biased base-emitter junction, the dependence of the static base current gain in the common-emitter (CE) configuration on emitter current, the output characteristic in the CE configuration.