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Graphene membranes act as temperature sensors in nanoelectromechanical devices due to their excellent thermal and high-temperature resistance properties. Experimentally, reports on the sensing performance of graphene mainly focus on the temperature interval under 400 K. To explore the sensing performance of graphene temperature sensors at higher temperature intervals, micro-fabricated single-layer graphene on a SiN_X substrate is presented as temperature sensors by semiconductor technology and its electrical properties were measured. The results show that the temperature coefficient of the resistance value is 2.07 × 10⁻³ in the temperature range of 300–450 K and 2.39 × 10⁻³ in the temperature range of 450–575 K. From room temperature to high temperature, the “metal” characteristics are presented, and the higher TCR obtained at higher temperature interval is described and analyzed by combining Boltzmann transport equation and thermal expansion theory. These investigations provide further insight into the temperature characteristics of graphene.