In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication
oleh: Yannan Yang, Rong Fan, Penghao Zhang, Luyu Wang, Maolin Pan, Qiang Wang, Xinling Xie, Saisheng Xu, Chen Wang, Chunlei Wu, Min Xu, Jian Jin, David Wei Zhang
| Format: | Article |
|---|---|
| Diterbitkan: | MDPI AG 2023-06-01 |
Deskripsi
In this work, we demonstrated a low current collapse normally on Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MIS-HEMT with in situ H-radical surface treatment on AlGaN. The in situ atomic pretreatment was performed in a specially designed chamber prior to the thermal ALD-Al<sub>2</sub>O<sub>3</sub> deposition, which improved the Al<sub>2</sub>O<sub>3</sub>/AlGaN interface with <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mrow><mi mathvariant="normal">D</mi></mrow><mrow><mi mathvariant="normal">i</mi><mi mathvariant="normal">t</mi></mrow></msub></mrow></semantics></math></inline-formula> of ~2 × 10<sup>12</sup> cm<sup>−2</sup> eV<sup>−1</sup>, and thus effectively reduced the current collapse and the dynamic <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mrow><mi mathvariant="normal">R</mi></mrow><mrow><mi mathvariant="normal">o</mi><mi mathvariant="normal">n</mi></mrow></msub></mrow></semantics></math></inline-formula> degradation. The devices showed good electrical performance with low <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mrow><mi mathvariant="normal">V</mi></mrow><mrow><mi mathvariant="normal">t</mi><mi mathvariant="normal">h</mi></mrow></msub></mrow></semantics></math></inline-formula> hysteresis and peak trans-conductance of 107 mS/mm. Additionally, when the devices operated under 25 °C pulse-mode stress measurement with <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mrow><mi mathvariant="normal">V</mi></mrow><mrow><mi mathvariant="normal">D</mi><mi mathvariant="normal">S</mi><mo>,</mo><mi mathvariant="normal">Q</mi></mrow></msub></mrow></semantics></math></inline-formula> = 40 V (period of 1 ms, pulse width of 1 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="sans-serif">μ</mi></mrow></semantics></math></inline-formula>s), the dynamic <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mrow><mi mathvariant="normal">R</mi></mrow><mrow><mi mathvariant="normal">o</mi><mi mathvariant="normal">n</mi></mrow></msub></mrow></semantics></math></inline-formula> increase of ~14.1% was achieved.