Microwave TFTs Made of MOCVD ZnO With ALD Al<sub>2</sub>O<sub>3</sub> Gate Dielectric
oleh: Hongyi Mi, Jung-Hun Seo, Chieh-Jen Ku, Jian Shi, Xudong Wang, Yicheng Lu, Zhenqiang Ma
| Format: | Article |
|---|---|
| Diterbitkan: | IEEE 2016-01-01 |
Deskripsi
In this paper, we report on the demonstration of microwave ZnO thin-film transistors (TFTs) grown by metal organic chemical vapor deposition (MOCVD) on a SiO<sub>2</sub>/Si substrate. In order to realize the microwave performance ZnO TFTs grown by MOCVD, the inverted staggered type device structure and the high quality Al<sub>2</sub>O<sub>3</sub> gate dielectric layer grown by atomic layer deposition were employed. ZnO TFTs show the depletion mode operation and exhibit an on/off drain current ratio of 6.7 × 10<sup>6</sup>, a peak transconductance of 124 μS, and a field-effect mobility (μFE) of 23.3 cm<sup>2</sup>/V·s, respectively. As a result of excellent dc performance, a cut-off frequency (f<sub>T</sub>) of 0.73 GHz and a maximum oscillation frequency (f<sub>max</sub>) of 2 GHz were achieved.