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In recent years, gallium nitride (GaN) has exhibited tremendous potential for power electronic devices owing to its wider energy band gap, higher breakdown electric field, and higher carrier mobility <xref ref-type="bibr" rid="ref1">[1]</xref>&#x2013;<xref ref-type="bibr" rid="ref2"/><xref ref-type="bibr" rid="ref3"/><xref ref-type="bibr" rid="ref4">[4]</xref>. Thanks to the availability of low-dislocation-density bulk GaN substrates and the intrinsic advantages of the vertical device topology, GaN-based vertical SBDs have been developed extensively towards high voltage and high current applications <xref ref-type="bibr" rid="ref5">[5]</xref>&#x2013;<xref ref-type="bibr" rid="ref6"/><xref ref-type="bibr" rid="ref7">[7]</xref>. However, similar to the lateral GaN SBDs based on the AlGaN/GaN heterostructures, GaN vertical SBDs also suffer from reverse leakage issues due to the energy barrier lowering effect at high reverse bias condition. To achieve a decent device performance, several device architectures have been developed, such as junction barrier Schottky (JBS) diode <xref ref-type="bibr" rid="ref8">[8]</xref>, MPS diode <xref ref-type="bibr" rid="ref9">[9]</xref>&#x2013;<xref ref-type="bibr" rid="ref10"/><xref ref-type="bibr" rid="ref11"/><xref ref-type="bibr" rid="ref12">[12]</xref>, and trench metal-insulator-semiconductor barrier Schottky (TMBS) diode <xref ref-type="bibr" rid="ref13">[13]</xref>, <xref ref-type="bibr" rid="ref14">[14]</xref>, which are designed to move the peak electric field from the interface of the Schottky junction to the inside of the device at high reverse bias, leading to a higher breakdown voltage and a lower reverse leakage current.