Atomic-scale 3D imaging of individual dopant atoms in an oxide semiconductor
oleh: K. A. Hunnestad, C. Hatzoglou, Z. M. Khalid, P. E. Vullum, Z. Yan, E. Bourret, A. T. J. van Helvoort, S. M. Selbach, D. Meier
| Format: | Article |
|---|---|
| Diterbitkan: | Nature Portfolio 2022-08-01 |
Deskripsi
Small variations in the density of dopants change the physical properties of complex oxides. Here, the authors resolve doping levels in three dimension, imaging the atomic sites that donors occupy in the small band gap semiconductor Er(Mn,Ti)O3.