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<p>A new technique to determine thermal conductivity of porous silicon is proposed. Transient thermoelectric voltage is measured after a pulsed laser irradiation, and knowledge of the voltage decay time constant and porosity of the structure gives the value of the thermal conductivity. For <em>n</em>-type Si of 70% porosity we show the value of 35 W m^-1 K^-1. The method can be easily applied for any other porous or otherwise structured low-dimensional media.</p><p>DOI: <a href="http://dx.doi.org/10.5755/j01.ms.21.2.5785">http://dx.doi.org/10.5755/j01.ms.21.2.5785</a></p>