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This work reports record-high three-terminal on-state drain-source breakdown voltage <inline-formula> <tex-math notation="LaTeX">$(BV_{DS})$ </tex-math></inline-formula> of &#x2212;735 V in p-channel GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with a drain field-plate (DFP). High-k and wide-gap Al2O3 was deposited as the gate oxide and surface passivation by using a non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. Good source/drain ohmic contacts were obtained by devising an Mg-doped p&#x002B;&#x002B;-GaN capper. Enhanced two-dimension hole gas (2DHG) characteristics and current densities have also been achieved by the devised p-GaN/GaN/AlN/Al0.3Ga0.7N heterostructure. The present p-channel GaN MOS-HFET design with (without) DFP has demonstrated superior on/off current ratio <inline-formula> <tex-math notation="LaTeX">$(I_{on}/I_{off}$ </tex-math></inline-formula>) of <inline-formula> <tex-math notation="LaTeX">$2\times 10^{6}$ </tex-math></inline-formula> (<inline-formula> <tex-math notation="LaTeX">$9.2\times10\,\,^{\mathrm{ 5}}$ </tex-math></inline-formula>), maximum drain-source current density <inline-formula> <tex-math notation="LaTeX">$(I_{DS, max})$ </tex-math></inline-formula> of &#x2212;9.5 (&#x2212;10.6) mA/mm at <inline-formula> <tex-math notation="LaTeX">$V_{DS}\,\,=$ </tex-math></inline-formula> 20 V, two-terminal off-state gate-drain breakdown voltage <inline-formula> <tex-math notation="LaTeX">$(BV_{GD})$ </tex-math></inline-formula> of 710 (520) V, and <inline-formula> <tex-math notation="LaTeX">$BV_{DS}$ </tex-math></inline-formula> of &#x2212;735 (&#x2212;545) V, respectively. The present design is suitable for applications in high-voltage complementary power-switching circuits of electric vehicle (EV) electronics.